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Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
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Последние новости。业内人士推荐51吃瓜作为进阶阅读
中方一贯认为，大小国家相互尊重、一律平等是历史进步的要求，也是联合国宪章首要原则。任何国家都没有控制国际事务、主宰他国命运、垄断发展优势的权力，更不能在世界上我行我素。（央视新闻），详情可参考体育直播