MOONGATE_HTTP__JWT__SIGNING_KEY: "change-me"
Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.，推荐阅读PDF资料获取更多信息
since basically the open-source release). Part of why they haven’t，推荐阅读PDF资料获取更多信息
相比之下，负面的批评显然是更多的，就算这只是个比喻，也非常荒唐。